IndiumV3, Russie, Analysis, bibRecord, 000054

Tunnel injection emitter structures with barriers comprising nanobridges

Identifieur interne : 000054 ( Russie/Analysis ); précédent : 000053; suivant : 000055

Tunnel injection emitter structures with barriers comprising nanobridges

Auteurs : RBID : Pascal:11-0505854

Descripteurs français

Pascal (Inist)
- Effet tunnel, Epaisseur, Structure bande, Photoluminescence, Spectre excitation, Transition niveau énergie, Gallium Indium Arséniure Mixte, Nanopont, Arséniure d'indium, Point quantique, Nanostructure.

English descriptors

KwdEn :
- Band structure, Energy-level transitions, Excitation spectrum, Gallium Indium Arsenides Mixed, Indium arsenides, Nanobridge, Nanostructures, Photoluminescence, Quantum dots, Thickness, Tunnel effect.

Abstract

Nanobridges which bypass the tunnel barrier in tunnel injection structures are investigated. The conditions leading to the formation of confined states within them are determined. It is shown that for tunnel barrier thicknesses in the 4-5 nm range confined hole states are likely to exist within the nanobridges. A new absorption feature, which has been observed only in structures comprising nanobridges, is assigned to transitions involving these hole states.

Links toward previous steps (curation, corpus...)

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Links to Exploration step

Pascal:11-0505854

Le document en format XML

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<author><name sortKey="Senichev, Alexander V" uniqKey="Senichev A">Alexander V. Senichev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Saint-Petersburg State University, Fock Institute of Physics</s1>
<s2>198504 Petrodvorets</s2>
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<sZ>1 aut.</sZ>
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<country>Russie</country>
<wicri:noRegion>198504 Petrodvorets</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Max-Born-Institut, Max-Born-Str. 2 A</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
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<country>Allemagne</country>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
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<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Max-Planck-Institut, Weinberg 2</s1>
<s2>06120 Halle</s2>
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<country>Allemagne</country>
<wicri:noRegion>06120 Halle</wicri:noRegion>
<wicri:noRegion>Weinberg 2</wicri:noRegion>
<wicri:noRegion>06120 Halle</wicri:noRegion>
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<author><name sortKey="Talalaev, Vadim G" uniqKey="Talalaev V">Vadim G. Talalaev</name>
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<author><name sortKey="Tomm, Jens W" uniqKey="Tomm J">Jens W. Tomm</name>
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<author><name sortKey="Zakharov, Nikolai D" uniqKey="Zakharov N">Nikolai D. Zakharov</name>
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<author><name sortKey="Novikov, Boris V" uniqKey="Novikov B">Boris V. Novikov</name>
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<author><name sortKey="Werner, Peter" uniqKey="Werner P">Peter Werner</name>
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<author><name sortKey="Cirlin, George E" uniqKey="Cirlin G">George E. Cirlin</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term>
<term>Energy-level transitions</term>
<term>Excitation spectrum</term>
<term>Gallium Indium Arsenides Mixed</term>
<term>Indium arsenides</term>
<term>Nanobridge</term>
<term>Nanostructures</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Thickness</term>
<term>Tunnel effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet tunnel</term>
<term>Epaisseur</term>
<term>Structure bande</term>
<term>Photoluminescence</term>
<term>Spectre excitation</term>
<term>Transition niveau énergie</term>
<term>Gallium Indium Arséniure Mixte</term>
<term>Nanopont</term>
<term>Arséniure d'indium</term>
<term>Point quantique</term>
<term>Nanostructure</term>
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<front><div type="abstract" xml:lang="en">Nanobridges which bypass the tunnel barrier in tunnel injection structures are investigated. The conditions leading to the formation of confined states within them are determined. It is shown that for tunnel barrier thicknesses in the 4-5 nm range confined hole states are likely to exist within the nanobridges. A new absorption feature, which has been observed only in structures comprising nanobridges, is assigned to transitions involving these hole states.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Tunnel injection emitter structures with barriers comprising nanobridges</s1>
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<fA11 i1="02" i2="1"><s1>TALALAEV (Vadim G.)</s1>
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<fA11 i1="03" i2="1"><s1>TOMM (Jens W.)</s1>
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<fA11 i1="04" i2="1"><s1>ZAKHAROV (Nikolai D.)</s1>
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<fA11 i1="05" i2="1"><s1>NOVIKOV (Boris V.)</s1>
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<sZ>5 aut.</sZ>
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<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>13 ref.</s0>
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<fA47 i1="01" i2="1"><s0>11-0505854</s0>
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<fA60><s1>P</s1>
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<fC01 i1="01" l="ENG"><s0>Nanobridges which bypass the tunnel barrier in tunnel injection structures are investigated. The conditions leading to the formation of confined states within them are determined. It is shown that for tunnel barrier thicknesses in the 4-5 nm range confined hole states are likely to exist within the nanobridges. A new absorption feature, which has been observed only in structures comprising nanobridges, is assigned to transitions involving these hole states.</s0>
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<fC02 i1="01" i2="3"><s0>001B70C63R</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Effet tunnel</s0>
<s5>02</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Tunnel effect</s0>
<s5>02</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Epaisseur</s0>
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<s5>03</s5>
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<fC03 i1="03" i2="3" l="FRE"><s0>Structure bande</s0>
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<s5>04</s5>
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<s5>05</s5>
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<fC03 i1="04" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>05</s5>
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<s5>06</s5>
</fC03>
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<s5>06</s5>
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<s5>07</s5>
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<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Gallium Indium Arsenides Mixed</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Mixto</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>11</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Nanopont</s0>
<s5>15</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>Nanobridge</s0>
<s5>15</s5>
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<fC03 i1="08" i2="X" l="SPA"><s0>Nanopuente</s0>
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<s5>16</s5>
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<fC03 i1="09" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
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<fC03 i1="10" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>18</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>18</s5>
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<fC03 i1="11" i2="3" l="FRE"><s0>Nanostructure</s0>
<s5>19</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Nanostructures</s0>
<s5>19</s5>
</fC03>
<fN21><s1>346</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Tunnel injection emitter structures with barriers comprising nanobridges

Tunnel injection emitter structures with barriers comprising nanobridges

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri